WEE Technology Company Limited

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

According to reports, US researchers have developed a new type of GaN based electronic device called resonant tunneling diode, which has been applied to 5G technology with a peak speed higher than expected.

"The frequency and output power of GaN based resonant tunneling diodes are higher than that of traditional materials, and the key to their speed is the use of Gan materials," the researchers said.

The GaN based "resonant tunneling diode" breaks the record of current output and switching rate of traditional devices, and enables applications (including communication, networking and remote sensing) to obtain electromagnetic waves and terahertz frequencies in the millimeter wave range.

As the third generation semiconductor material, gallium nitride (GAN) is a kind of hard material with high melting point (melting point is about 1700 ℃), which has the characteristics of high frequency, high efficiency, high pressure resistance and so on. It is used to make a variety of power devices and chips.

Gallium nitride has been studied in the field of semiconductor materials for many years. Recently, it is widely known because it can be used in chargers. The charging market is not the only place where Gan power devices can be used, but also in the fields of Optoelectronics and RF.

It is worth mentioning that, in the RF field, gallium nitride RF devices are suitable for high-frequency and high-power scenarios, and are excellent products in the 5G era. They will replace Si based chips and be used in 5G base stations, satellite communications, military radars and other scenarios.

In the Political Bureau meeting, the construction of 5G base station ushered in the peak, the corresponding number and quality of various RF devices and chips are improving, and the market demand is strong. Gallium nitride technology is gradually occupying the market, which is unstoppable.

According to the prediction of topu Industry Research Institute, by 2023, the base station Gan RF device scale will reach the peak, reaching 11.26 billion yuan. Combined with the market of satellite communication and military radar, it is predicted that the Gan RF market will grow from 645 million dollars in 2018 to about 2 billion dollars in 2024.

In addition, GaN based UV laser has important application value in UV curing, UV sterilization and other fields. At present, both China and the United States have used GaN based UV disinfection and sterilization, and the relevant market has grown.

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

Rectifiers / Transient Voltage Suppressors

Transient Voltage Suppressors

Schottky Rectifiers

• Rectifiers for high di/dt snubbers in compact packages

• 200 W to 600 W TVS for snubbers; low clamping ratios

P2SMA220A, P4SMA180A, P4SMA220A, P6SMB180A, P6SMB200A

• 1500 W to 5000 W TVS with high power density for lightning protection 

SMCJ75CA

• 1500 W / 3000 W TVS with high power density for DC/DC protection

SMCJ24CA, SMCJ33CA, SMCJ36A

• Schottky rectifiers in compact packages for auxiliary service and synchronous parallel rectification

• Packages: SMF(DO-219AB)，MicroSMP(DO-219AD)，SlimSMA(DO-221AC)，SlimSMAW(DO-221AD)，SMPA(DO-221BC)，SMC(DO-214AB)，SMA(DO-214AC)，SMB(DO-214AA)

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

System Architecture (diagram)

High Current Density Bridge Rectifiers

Didoes and Rectifiers

Schottky Rectifiers

Low Voltage Rectifiers

Small Signal Switching Diodes

Small Signal Schottky Diodes

Small Signal Zener Diodes

High current density bridge rectifiers in compact packages

• Low VF and high forward surge current capability

• Improves system power efficiency

Rectifiers in compact packages for auxiliary functions (snubber, clamp, bootstrap, rectifier, etc.)

• Increased power density for space savings

• Improved recovery for better EMC

Schottky rectifiers in compact packages for sub-power in line cards

• Increased power density for space savings

Low voltage rectifiers for bridgeless and multiphase bridgeless topologies

• Increased power density for space savings, improved efficiency

WEE Technology Company Limited
Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

2019 is a year of rapid changes, the economy is under downward pressure, and trade war conflicts have intensified, and many industries have entered a recession cycle. However, semiconductor industry 2019 is a year of rapid changes. The recession cycle has entered, but the semiconductor industry continues to move forward on the opportunity of domestic substitution and industrial renewal. For compound semiconductors, whether it is gallium nitride for radio frequency or silicon carbide for power electronics, there has been considerable development.

The 5G communication business is entering a period of rapid expansion, and the corresponding GaN chips and power chips continue to grow. Gallium nitride technology has basically determined its technical route and application in the field of radio frequency, that is, growing gallium nitride epitaxy on silicon carbide high-purity insulating substrates, and making chips on it for communication applications such as high-frequency power amplifiers.

With the development of 5G communications and the Internet of Things, the demand in this field will be increasing. It is worth noting that the application of GaN technology in power supplies. The cost and performance of gallium nitride power devices grown on silicon substrates have been much better than similar silicon devices. Although its long-term reliability still needs to be verified, for consumer-grade applications such as mobile phone fast charging, GaN is expected to be fully introduced and applied.

Silicon carbide is a very promising material, especially in power devices and power applications. It is currently receiving great attention. With the delivery of the first batch of domestic Tesla electric vehicles by the end of 2019, silicon carbide power devices related fields have been fully replaced. The trend of silicon-based IGBTs is becoming more and more obvious. Especially the high efficiency, low weight, small volume, and ease of use in heat dissipation and parallel connection brought by silicon carbide are crucial to the overall design of new energy vehicles.

The rapid development of industries such as automotive electronics, 5G technology, new energy vehicles, and rail transportation has increased the demand for high-temperature, high-power, high-voltage, and high-frequency devices in electronic technology, so the third generation of semiconductors came into being. The third generation semiconductors mainly include silicon carbide (SiC), aluminum nitride (AlN), gallium nitride (GaN), diamond, and zinc oxide (ZnO). Among them, the more mature ones are SiC and GaN.

WEE Technology Company Limited

Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

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WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEET MBR30300CT MBR30300FCT 30A High Barrier Power Schottky Rectifiers 300V Features and Cross Reference

MBR3020FCT · MBR3020PT · MBR3020PT · MBR3020PT · MBR3020W · MBR3020WT · MBR30250CT · MBR3030 · MBR3030 · MBR30300CT · MBR30300FCT

• 150°C operating junction temperature.

• Offer 15A half wave and 30A full wave rectification.

• Low power loss, high efficiency.

• High current capability

• High surge capability.

• Guardring for overvoltage protection.

• Low stored charge majority carrier conduction

• Lead-free parts meet RoHS requirments.

• Suffix "-H" indicates Halogen-free part, ex.MBR30300CT-H

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

Plastic Medium-Power Complementary SiliconTransistors

Designed for general−purpose amplifier and low−speed switching applications.

DARLINGTON5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Generally are 60−80−100 VOLTS, 65 WATTS

TIP122 is a plastic medium power complementary silicon transistor known for its high current gain (hfe = 1000) and high collector current (IC =5A), and normally used to control loads with high current or in applications where high amplification is required.

Cross reference to TIP122 STMicroelectronics | Discrete Semiconductor 

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

What does Forward Voltage Drop mean?
Electricity uses up a little energy pushing its way through the diode, rather like a person pushing through a door with a spring. This means that there is a small forward voltage drop across a conducting diode. It is about 0.7V for most diodes which are made from silicon.The forward voltage drop of a diode is almost constant whatever the current passing through the diode so they have a very steep characteristic (current-voltage graph).

What is the meaning of Reverse Voltage?

When a reverse voltage is applied a perfect diode does not conduct but real diodes leak a very tiny current (typically a few µA). This can be ignored in most circuits because it will be very much smaller than the current flowing in the forward direction. However, all diodes have a maximum reverse voltage (usually 50V or more) and if this is exceeded the diode will fail and pass a large current in the reverse direction, this is called breakdown.

We suggest you to read more technical information about diodes symbols. Below article will tell you what the diodes symbols stand for.

If you still have some doubts, please contact with WEET sales engineers. We are ready to help you.

https://www.electrical-symbols.com/electric-electronic-symbols/diode-symbols.htm

WEE Technology Company Limited

Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEET WEE Technology NPN − BC368; PNP − BC369 Amplifier Transistors Features:

Type Designator: BC368. 

Material of Transistor: Si. 

Polarity: NPN. 

Maximum Collector Power Dissipation (Pc): 0.8 W. 

Package: TO-92. 

Lead/Terminal Type: Radial Number Leads/Terminals

Cross Reference: ON SEMICONDUCTOR (FAIRCHILD) BC368 | Transistor: bipolar,NPN; 25V; 1A; 800mW; TO92

Solution application · IT application · Digital application · Automotive application · Circuit protection application · Power application · LED application：

 B772, B772P01, B772P02, BC327, BC328, BC337, BC338, BC368, BC369, BC546 

WEE Technology Company Limited 

Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEET have different packing methods for different package Bridge Rectifiers. For small SMD products, we have ammo packing.

For small dipped products, we adopt tube packing. But for large packages, we choose bulk and box packing. Please refer to some of WEET strong Bridge Rectifiers in box packing.

Below table is WEET standard packing information, if you need special packing, please talk to your WEET sales engineers. Thank you for understanding.

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

Comparison between P-channel and N-channel MOSFETs in an application

The source voltage of an N-channel MOSFET when used as a high side switch will be at a higher potential with respect to ground. Thus, to drive an N-channel MOSFET an isolated gate driver or a pulse transformer must be used. The driver requires an additional power supply whilst the transformer can sometimes produce incorrect conditions. However, this is not the case with P-channel. It is easy to drive a P-channel high side switch with a very simple level shifter circuit. Doing this simplifies the circuit and often reduces the overall cost. 

However, the point to be noted here is that it is not possible to achieve the same RDS(on) performance for a P-channel MOSFET as for an N-channel with the same chip size. As the mobility of the carriers in an N-channel is approximately 2 to 3 times higher than that of a P-channel, for the same RDS(on) value, the P-channel chip must be 2 to 3 times the size of the N-channel. Because of the larger chip size, the P-channel device will have a lower thermal resistance and a higher current rating but its dynamic performance will be affected proportionally by the chip size. So, in a low frequency application where the conduction losses are prominent, a P-channel MOSFET should have a comparable RDS(on) to that of an N-channel. In this case, the P-channel MOSFET chip area will be larger than that of the N-channel.

Also, in high frequency applications where the switching losses are dominant, a P-channel MOSFET should have similar total gate charges to that of an N-channel. In this case, a P-channel MOSFET has a similar chip size but a lower current rating than that of an N-channel.

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEET TO-251-4R TO-252-4R TO-220A TO-220B TO-220F MOSFETs  Schottky Diodes Rectifiers N Channel Transistor
BTA06/BTB06 6A 600V 800V BAT12 12A 600V 800V three terminal bidirectional thyristor
TO-220 package is a kind of in-line package commonly used in high-power transistors and small and medium-sized integrated circuits.
Among them, to is the abbreviation of transformer outline.

Generally, TO-220 is a single row straight plug, which can lead out 3, 5 or 7 feet. Standard TO-220 footprint (seven pins).
TO-220 and to-202F are basically the same shape, they are all 3-pin single in-line package with 2.54mm pin pitch.
To-220F is a full plastic package, and there is no need to add insulation pad to the radiator.
TO-220 with metal sheet connected to the middle foot, if the radiator is installed, an insulating pad shall be added.

Performance comparison and difference between TO-220 and TO-220F
TO-220, TO-220F: TO-220F is a full plastic package. When it is installed on the radiator, there is no need to add an insulating pad;
TO-220 with metal sheet is connected to the middle foot, and an insulating pad is added when the radiator is installed.
The MOS tubes of these two packaging styles have similar appearance and can be used interchangeably.
The difference of PD between TO-220 and TO-220F is due to the difference of RJC between the two packages.
TJ is generally considered to be 150 ℃. TJ = TC + PD * RJC, in which TC is the temperature of the structure shell closest to the wafer,
PD is the power consumption carried on MOSFET, and RJC is the thermal resistance of judgment to case.

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. 3-phase Bridge Rectifier also found in many common power supplies.

WEET Pin Leads and 3 Single-Phase Bridge Rectifiers as below:

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEE Technology WEET® KBP 3.0 AMPS KBP3005 THUR KBP310 (KBP3005, KBP301, KBP302, KBP304, KBP306, KBP308, KBP310) Glass Passivated Bridge Rectifiers

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_KBP3005_THUR_KBP310.html

There are four kinds of rectifier bridge packages: square bridge, flat bridge, round bridge and mini bridge.

Square bridge mainly includes (BR3, BR6, BR8, gbpc, kbpc, kbpc-w, gbpc-w, mt-35 (three-phase bridge)).

Flat bridge is mainly packaged (kbp, KBL, kbu, kbj, GBU, GBJ, d3k).

The round bridge is mainly packaged with (WOB, WOM, Rb-1).

The mini bridge is mainly packaged (BDS, MBS, MBF, ABS).

WEE Technology Company Limited
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

Mostly, round terminal KBP210 can be replaced by flat terminal package GBP210, with same electronics characteristics and price level.

Based on different PCB board design, we have to choose the best suitable products for your circuit and PCB board.

https://www.weetcl.com/pdf/WEET_KBP2005_THUR_KBP210.pdf

https://www.weetcl.com/pdf/WEET_GBP2005_THUR_GBP210.pdf

WEE Technology Company Limited 
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEE Technology WEET® KBL 6.0 AMPS KBL6005 THRU KBL610 (KBL6005, KBL601, KBL602, KBL604, KBL606, KBL608, KBL610) Glass Passivated Bridge Rectifiers

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_KBL6005_THRU_KBL610.html

https://www.weetcl.com/pdf/WEET_KBL6005_THRU_KBL610.pdf

KBL601 rectifier bridge maximum average forward rectified current: 6A, reverse peak voltage: 1000V; 
main application fields: LED lamp rectifier, mobile phone charger, household small appliances, small power switching power supply and other fields.

WEE Technology Company Limited 
Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

Why choose WEE Technology bridge rectifiers? The reasons are as below:

A: WEET's bridge rectifier factory is located in the famous semiconductor province of China, Anhui. 

B: WEET use bigger and good performance GPP chips than most to the competitors.

C: WEET comprehensive and full support of after service. 
D:To guarantee the quality, all of the bridge rectifiers' machines are full automotive machines imported from Taiwan and Japan

WEE Technology WEET® KBJ 6.0 AMPS KBJ6005 THRU KBJ610
(KBJ6005, KBJ601, KBJ602, KBJ604, KBJ606, KBJ608, KBJ610) Glass Passivated Bridge Rectifiers

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_KBJ6005_THRU_KBJ610.html

WEE Technology WEET® KBJ 10.0 AMPS KBJ10005 THUR KBJ1010 
(KBJ10005, KBJ1001, KBJ1002, KBJ1004, KBJ1006, KBJ1008, KBJ1010) Glass Passivated Bridge Rectifiers

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_KBJ10005_THUR_KBJ1010.html

WEE Technology Company Limited 

Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

How to understand WEET bridge Rectifiers Part Number GBU1510 ?

[GBU1510] represents the complete model of the product. 

[GBU] is the packaging method of the product. 

The number [15] represents the forward current of 15A. 

The suffix [10] represents the reverse withstand voltage of 1000V

WEET bridge rectifiers are ideal for printed circuit board , Reliable low cost construction utilizing molded plastic technique.

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_GBU4005_THUR_GBU410.html

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_GBU15005_THRU_GBU1510.html

https://www.weetcl.com/pdf/WEET_GBU15005_THRU_GBU1510.pdf

WEE Technology Company Limited 

Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

WEE Technology WEET® GBU 8.0 AMPS GBU8005 THRU GBU810 (GBU8005, GBU801, GBU802, GBU804, GBU806, GBU808, GBU810) Glass Passivated Bridge Rectifiers

REVERSE VOLTAGEy - 50 to 1000 Volts 

FORWARD CURRENT - 8.0 Amperes

https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_GBU8005_THRU_GBU810.html

https://www.weetcl.com/pdf/WEET_GBU8005_THRU_GBU810.pdf

Products applied in the field of small current: small power switching power supply, power adapter, LED light rectifier, electric fan, TV, indoor Air conditioner, household appliances and other related electrical products.

WEE Technology Company Limited 

Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

GBPC5010 is a WEET brand single-phase rectifier square bridge, with main parameters and specifications as below:

Voltage: 1000V;

Chip material: GPP;

Forward current (IO): 50A;

Number of chips: 4 pieces

Forward voltage (VF): 1.05V;

Chip size: 180MIL;

Surge current IFSM: 500A;

Leakage current (IR): 500uA;

Working temperature: - 55 ℃ ~ + 150 ℃;

Recovery time (TRR): 500ns;

Number of leads: 4 lug terminals;

Packing method: Bluk and box packing

Application field of rectifier bridge WEET GPBC5010:

Gbpc5010 is mainly used in the field of power circuit rectifier products, switching power supply, power adapter, LED light source circuit, charger, refrigerator air conditioner, television, household appliances and small appliances and other related products, vehicle rectifier, mechanical and electrical equipment.

WEET would like to share the difference between GBPC5010 and GBPC5010W:

The main difference between GBPC5010 and GBPC5010W is the packaging form of the two. GBPC5010W is the single-phase rectifier square bridge of the pin terminals, so "W" is the different manifestation of the packaging, and there is not much difference in the electrical parameters between the two. Basically according the PCB board design, especially the PCB hole, engineers can decide which terminal type is more suitable. Usually we suggest lug terminals WEET GBPC5010 for most applications