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WEET 2020-2025 Semiconductor & Electronic Component Manufacturing Market Analysis

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    Geographical segmentation of Electronic Components market:

    Americas (United States, Canada, Mexico, Brazil), 

    APAC (China, Japan, Korea, Southeast Asia, India, Australia),

    Europe (Germany, France, UK, Italy, Russia, Spain),

    Middle East & Africa (Egypt, South Africa, Israel, Turkey, GCC Countries)


    Global Electronic Components market by Type: Active components, Passive components, Electromechanical


    Global Electronic Components market by application: Automotive, Communications, Computing Applications, Industrial, Instrumentation, Lighting, Medical, Motor Control, Security


    Global Electronic Components market by major vendor/manufacturers in the market:

    Analog Devices, Inc., Omron, Texas Instruments, ABB, NXP Semiconductors, Murata, Kyocera, STMicroelectronics,  Samsung Electro-Mechanics, Infineon Technologies, Qorvo, Vishay, Molex, TDK Corporation, Nippon Mektron, Microchip, Taiyo Yuden Co., Ltd., WEE Technology, Skyworks, ON Semiconductor, TE Connectivity Ltd., Vectron, Panasonic Corporation, Eaton Corp., Littelfuse, KEMET, Microchip Technology, Yageo, Nippon Chemi-Con, Maxim Integrated, Amphenol

Publish: 2020/7/27 Category: About WEE Technology Read: Times Comment: 0Times

WEET Released the Key Trends in Mobile Communication in 5G Applications and Diodes Usage in GNSS and

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    Mobile phones represent the largest worldwide market in terms of both volume and number of applications on a single platform. 

    Currently about 1.5 billion smartphones are shipped per year worldwide. 

    The major wireless functions in a typical mobile phone include a 2G/3G/4G (GSM/EDGE/CDMA/UMTS/WCDMA/LTE/LTEA/TD-SCDMA/TD-LTE) cellular modem, 

    and wireless connectivity systems such as Wireless Local Area Network (WLAN), Bluetooth, Global Navigation Satellite System (GNSS), broadcasting receivers, and Near-Field Communication (NFC).


    Motivated by increasing demand for mobile broadband services with higher data rates and better quality of service, the mobile phone industry has seen tremendous growth in recent years from 3G/3.5G High-Speed Packet Access (HSPA), Evolved High-Speed Packet Access (HSPA+) to 3.9G Long-Term Evolution (LTE), recently 4G Long-Term Evolution Advanced (LTE-A) and 5G.

Publish: 2020/7/20 Category: About WEE Technology Read: Times Comment: 0Times

WEET Bridge Rectifiers KUB KPB DBS MBS KBPC GBPC Bulk Box and Tube Packing

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    WEE Technology is the earliest bridge rectifiers factory in China, which also specialized in diodes and related semiconductors. 

    Tube packing for lower current and small size bridge rectifiers.

    1.0 AMPS. MB1F THRU MB10F (MB1F, MB2F, MB3F, MB4F, MB6F, MB8F, MB10F) Glass Passivated Bridge Rectifiers

    2.0 AMPS. DB201 THRU DB207(DB201, DB202, DB203, DB204, DB205, DB206, DB207) Glass Passivated Bridge Rectifiers

    1.0 AMPS. MB1S THRU MB10S (MB1S, MB2S, MB3S, MB4S, MB6S, MB8S, MB10S) Glass Passivated Bridge Rectifiers


    Box Bulk packing  for higher current and big size bridge rectifiers.

    50.0 AMPS GBPC50005 THRU GBPC5010 (GBPC50005, GBPC5001, GBPC5002, GBPC5004, GBPC5006, GBPC5008, GBPC5010) Bridge Rectifiers

    35.0 AMPS GBPC35005W THUR GBPC3510W (GBPC35005W, GBPC3501W, GBPC3502W, GBPC3504W, GBPC3506W, GBPC3508W, GBPC3510W) Bridge Rectifiers

    15.0 AMPS GBPC15005 THRU GBPC1510 ( GBPC15005, GBPC1501, GBPC1502, GBPC1504, GBPC1506, GBPC1508, GBPC1510 ) Bridge Rectifiers

    35.0 AMPS KBPC35005 THUR KBPC3510(KBPC35005W, KBPC3501W, KBPC3502W, KBPC3504W, KBPC3506W, KBPC3508W, KBPC3510W) Bridge Rectifiers

    10.0 AMPS KBPC10005 THUR KBPC1010K ( KBPC10005, KBPC1001, KBPC1002, KBPC1004, KBPC1006, KBPC1008, KBPC1010 ) Bridge Rectifiers


    https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/


Publish: 2020/7/14 Category: About WEE Technology Read: Times Comment: 0Times

WEET Glass and Plastic Axial and SMD Diodes and Rectifiers Bulk, Ammo and Tape and Reel Packing

Publish: 2020/7/6 Category: About WEE Technology Read: Times Comment: 0Times

WEET SIC Schottky Diode SCS208AGC in 5G Micro Station 1KW Power PFC Circuit

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    SIC Schottky diode SCS208AGC is used in 1KW 5G communication power supply PFC circuit to effectively improve the system efficiency

    With the rapid increase of power consumption and quantity of 5g base station, the power supply problem is also the biggest problem. In 5G wireless side micro station power supply scheme, the direct power supply scheme is commonly used. The power is in the range of 1kW ~ 3KW. The circuit diagram frame of 5g micro station power supply scheme mainly includes single-phase rectification, PFC, LLC transformation and synchronous rectification.


    The application of SIC Schottky diode SCS208AGC in 5G MicroStation 1KW power PFC circuit has the following advantages:

    1. The reverse voltage VR is 650V, which can meet the application voltage requirement of rectifying output voltage between 300V and 400V, and reserve two times of margin, which can better deal with high reverse voltage;

    2. The continuous forward current if is 8a, which can meet the power demand of 1kW; the total capacitance charge QC is 13nc. Small reverse recovery charge can switch at high speed, reduce switching loss and effectively improve the overall system efficiency of the power supply;

    3. Because scs208agc can switch at high speed, the switching frequency of PFC switch tube Q2 / Q4 can be increased, so as to reduce the size and cost of magnetic materials L1 and L2, and reduce the cost for the overall power supply design;

    4、 The temperature range of working junction and storage is -55~175 ℃, wide temperature range. It can be well adapted to the closed natural cooling conditions when the power box is installed as an outdoor holding pole or wall mounted installation environment.

    5. The TO-220AC package has small package volume and is easy to be arranged in the compact power board position.

Publish: 2020/6/29 Category: Schottey Barrier Rectifiers Read: Times Comment: 0Times

WEET New Gallium Nitride Devices Developed in the US! 5G Technology Peak Rate Exceeds Expectations

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    According to reports, US researchers have developed a new type of GaN based electronic device called resonant tunneling diode, which has been applied to 5G technology with a peak speed higher than expected.

    "The frequency and output power of GaN based resonant tunneling diodes are higher than that of traditional materials, and the key to their speed is the use of Gan materials," the researchers said.

    The GaN based "resonant tunneling diode" breaks the record of current output and switching rate of traditional devices, and enables applications (including communication, networking and remote sensing) to obtain electromagnetic waves and terahertz frequencies in the millimeter wave range.

    As the third generation semiconductor material, gallium nitride (GAN) is a kind of hard material with high melting point (melting point is about 1700 ℃), which has the characteristics of high frequency, high efficiency, high pressure resistance and so on. It is used to make a variety of power devices and chips.

    Gallium nitride has been studied in the field of semiconductor materials for many years. Recently, it is widely known because it can be used in chargers. The charging market is not the only place where Gan power devices can be used, but also in the fields of Optoelectronics and RF.

    It is worth mentioning that, in the RF field, gallium nitride RF devices are suitable for high-frequency and high-power scenarios, and are excellent products in the 5G era. They will replace Si based chips and be used in 5G base stations, satellite communications, military radars and other scenarios.

    In the Political Bureau meeting, the construction of 5G base station ushered in the peak, the corresponding number and quality of various RF devices and chips are improving, and the market demand is strong. Gallium nitride technology is gradually occupying the market, which is unstoppable.

    According to the prediction of topu Industry Research Institute, by 2023, the base station Gan RF device scale will reach the peak, reaching 11.26 billion yuan. Combined with the market of satellite communication and military radar, it is predicted that the Gan RF market will grow from 645 million dollars in 2018 to about 2 billion dollars in 2024.

    In addition, GaN based UV laser has important application value in UV curing, UV sterilization and other fields. At present, both China and the United States have used GaN based UV disinfection and sterilization, and the relevant market has grown.

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Publish: 2020/6/17 Category: About WEE Technology Read: Times Comment: 0Times

WEET 5G Applications in Transient Voltage Suppressors SMCJ24CA and Schottky Rectifiers and TVS Didoe

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    Rectifiers / Transient Voltage Suppressors

    Transient Voltage Suppressors

    Schottky Rectifiers

    • Rectifiers for high di/dt snubbers in compact packages

    • 200 W to 600 W TVS for snubbers; low clamping ratios

    P2SMA220A, P4SMA180A, P4SMA220A, P6SMB180A, P6SMB200A

    • 1500 W to 5000 W TVS with high power density for lightning protection 

    SMCJ75CA

    • 1500 W / 3000 W TVS with high power density for DC/DC protection

    SMCJ24CA, SMCJ33CA, SMCJ36A

    • Schottky rectifiers in compact packages for auxiliary service and synchronous parallel rectification

    • Packages: SMF(DO-219AB),MicroSMP(DO-219AD),SlimSMA(DO-221AC),SlimSMAW(DO-221AD),SMPA(DO-221BC),SMC(DO-214AB),SMA(DO-214AC),SMB(DO-214AA)

Publish: 2020/6/9 Category: About WEE Technology Read: Times Comment: 0Times

WEET WEE Technology 5G APPLICATIONS of Diodes and Rectifiers in Base Stations System Architecture

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    System Architecture (diagram)

    High Current Density Bridge Rectifiers

    Didoes and Rectifiers

    Schottky Rectifiers

    Low Voltage Rectifiers

    Small Signal Switching Diodes

    Small Signal Schottky Diodes

    Small Signal Zener Diodes


    High current density bridge rectifiers in compact packages

    • Low VF and high forward surge current capability

    • Improves system power efficiency

    Rectifiers in compact packages for auxiliary functions (snubber, clamp, bootstrap, rectifier, etc.)

    • Increased power density for space savings

    • Improved recovery for better EMC

    Schottky rectifiers in compact packages for sub-power in line cards

    • Increased power density for space savings

    Low voltage rectifiers for bridgeless and multiphase bridgeless topologies

    • Increased power density for space savings, improved efficiency

Publish: 2020/6/2 Category: About WEE Technology Read: Times Comment: 0Times

WEET Shares Technology Frontier—GaN Semiconductor—Key Material for 5G Application

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    2019 is a year of rapid changes, the economy is under downward pressure, and trade war conflicts have intensified, and many industries have entered a recession cycle. However, semiconductor industry 2019 is a year of rapid changes. The recession cycle has entered, but the semiconductor industry continues to move forward on the opportunity of domestic substitution and industrial renewal. For compound semiconductors, whether it is gallium nitride for radio frequency or silicon carbide for power electronics, there has been considerable development.

    The 5G communication business is entering a period of rapid expansion, and the corresponding GaN chips and power chips continue to grow. Gallium nitride technology has basically determined its technical route and application in the field of radio frequency, that is, growing gallium nitride epitaxy on silicon carbide high-purity insulating substrates, and making chips on it for communication applications such as high-frequency power amplifiers.

    With the development of 5G communications and the Internet of Things, the demand in this field will be increasing. It is worth noting that the application of GaN technology in power supplies. The cost and performance of gallium nitride power devices grown on silicon substrates have been much better than similar silicon devices. Although its long-term reliability still needs to be verified, for consumer-grade applications such as mobile phone fast charging, GaN is expected to be fully introduced and applied.

    Silicon carbide is a very promising material, especially in power devices and power applications. It is currently receiving great attention. With the delivery of the first batch of domestic Tesla electric vehicles by the end of 2019, silicon carbide power devices related fields have been fully replaced. The trend of silicon-based IGBTs is becoming more and more obvious. Especially the high efficiency, low weight, small volume, and ease of use in heat dissipation and parallel connection brought by silicon carbide are crucial to the overall design of new energy vehicles.

    The rapid development of industries such as automotive electronics, 5G technology, new energy vehicles, and rail transportation has increased the demand for high-temperature, high-power, high-voltage, and high-frequency devices in electronic technology, so the third generation of semiconductors came into being. The third generation semiconductors mainly include silicon carbide (SiC), aluminum nitride (AlN), gallium nitride (GaN), diamond, and zinc oxide (ZnO). Among them, the more mature ones are SiC and GaN.



Publish: 2020/5/27 Category: About WEE Technology Read: Times Comment: 0Times

WEET Social Media in 2020 Blogs, Website, Twitter, WordPress, LinkedIn, YouTube, Capacitors Web

Publish: 2020/5/20 Category: About WEE Technology Read: Times Comment: 0Times

WEET MBR30300CT MBR30300FCT 30A High Barrier Power Schottky Rectifiers 300V Features and Cross Refer

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    WEET MBR30300CT MBR30300FCT 30A High Barrier Power Schottky Rectifiers 300V Features and Cross Reference

    MBR3020FCT · MBR3020PT · MBR3020PT · MBR3020PT · MBR3020W · MBR3020WT · MBR30250CT · MBR3030 · MBR3030 · MBR30300CT · MBR30300FCT

    • 150°C operating junction temperature.

    • Offer 15A half wave and 30A full wave rectification.

    • Low power loss, high efficiency.

    • High current capability

    • High surge capability.

    • Guardring for overvoltage protection.

    • Low stored charge majority carrier conduction

    • Lead-free parts meet RoHS requirments.

    • Suffix "-H" indicates Halogen-free part, ex.MBR30300CT-H

Publish: 2020/4/28 Category: Schottey Barrier Rectifiers Read: Times Comment: 0Times

WEET TIP122 5.0 A 100 V NPN Darlington Bipolar Power Transistor TIP120, TIP121, TIP122

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    Plastic Medium-Power Complementary SiliconTransistors

    Designed for general−purpose amplifier and low−speed switching applications.


    DARLINGTON5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

    Generally are 60−80−100 VOLTS, 65 WATTS

    TIP122 is a plastic medium power complementary silicon transistor known for its high current gain (hfe = 1000) and high collector current (IC =5A), and normally used to control loads with high current or in applications where high amplification is required.


    Cross reference to TIP122 STMicroelectronics | Discrete Semiconductor 

Publish: 2020/4/22 Category: Small Signal Transistors Read: Times Comment: 0Times

WEET Shares What does Forward Voltage Drop mean and What is the meaning of Reverse Voltage

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    What does Forward Voltage Drop mean?
    Electricity uses up a little energy pushing its way through the diode, rather like a person pushing through a door with a spring. This means that there is a small forward voltage drop across a conducting diode. It is about 0.7V for most diodes which are made from silicon.The forward voltage drop of a diode is almost constant whatever the current passing through the diode so they have a very steep characteristic (current-voltage graph).

    What is the meaning of Reverse Voltage?

    When a reverse voltage is applied a perfect diode does not conduct but real diodes leak a very tiny current (typically a few µA). This can be ignored in most circuits because it will be very much smaller than the current flowing in the forward direction. However, all diodes have a maximum reverse voltage (usually 50V or more) and if this is exceeded the diode will fail and pass a large current in the reverse direction, this is called breakdown.

    We suggest you to read more technical information about diodes symbols. Below article will tell you what the diodes symbols stand for.

    If you still have some doubts, please contact with WEET sales engineers. We are ready to help you.

    https://www.electrical-symbols.com/electric-electronic-symbols/diode-symbols.htm


Publish: 2020/4/13 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET BC368 NPN General Purpose Amplifier Silicon NPN Transistor in a TO-92 Plastic Package

    WEE Technology Company Limited

    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers


    WEET WEE Technology NPN − BC368; PNP − BC369 Amplifier Transistors Features:

    Type Designator: BC368. 

    Material of Transistor: Si. 

    Polarity: NPN. 

    Maximum Collector Power Dissipation (Pc): 0.8 W. 

    Package: TO-92. 

    Lead/Terminal Type: Radial Number Leads/Terminals

    Cross Reference: ON SEMICONDUCTOR (FAIRCHILD) BC368 | Transistor: bipolar,NPN; 25V; 1A; 800mW; TO92

    Solution application · IT application · Digital application · Automotive application · Circuit protection application · Power application · LED application:

     B772, B772P01, B772P02, BC327, BC328, BC337, BC338, BC368, BC369, BC546 



Publish: 2020/4/6 Category: Small Signal Transistors Read: Times Comment: 0Times

WEET Bridge Rectifiers Package Bulk Box Packing KBPC KBPC-W BR BR-W KBU KBP KBL

    WEE Technology Company Limited 

    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers


    WEET have different packing methods for different package Bridge Rectifiers. For small SMD products, we have ammo packing.

    For small dipped products, we adopt tube packing. But for large packages, we choose bulk and box packing. Please refer to some of WEET strong Bridge Rectifiers in box packing.

    Below table is WEET standard packing information, if you need special packing, please talk to your WEET sales engineers. Thank you for understanding.



    OUTLINE/PACKAGEBOX(pcs)
    WOM/RB-15/ WOB1000
    BR-3200
    BR-6200
    KBL400
    KBU400
    KBJ250
    KBPC15-5050
    KBPC15-50, KBPC-W100
    GBPC15-5050
    GBPC15-50, GBPC-W100
    BR35-L50
    GBJ250
    GBU250
    SVB50



Publish: 2020/4/1 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET Transistor TO-220 Style Power Package P Channel MOSFET PMOS For Switch Circuit Application

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers


    Comparison between P-channel and N-channel MOSFETs in an application


    The source voltage of an N-channel MOSFET when used as a high side switch will be at a higher potential with respect to ground. Thus, to drive an N-channel MOSFET an isolated gate driver or a pulse transformer must be used. The driver requires an additional power supply whilst the transformer can sometimes produce incorrect conditions. However, this is not the case with P-channel. It is easy to drive a P-channel high side switch with a very simple level shifter circuit. Doing this simplifies the circuit and often reduces the overall cost. 


    However, the point to be noted here is that it is not possible to achieve the same RDS(on) performance for a P-channel MOSFET as for an N-channel with the same chip size. As the mobility of the carriers in an N-channel is approximately 2 to 3 times higher than that of a P-channel, for the same RDS(on) value, the P-channel chip must be 2 to 3 times the size of the N-channel. Because of the larger chip size, the P-channel device will have a lower thermal resistance and a higher current rating but its dynamic performance will be affected proportionally by the chip size. So, in a low frequency application where the conduction losses are prominent, a P-channel MOSFET should have a comparable RDS(on) to that of an N-channel. In this case, the P-channel MOSFET chip area will be larger than that of the N-channel.


    Also, in high frequency applications where the switching losses are dominant, a P-channel MOSFET should have similar total gate charges to that of an N-channel. In this case, a P-channel MOSFET has a similar chip size but a lower current rating than that of an N-channel.



Publish: 2020/3/25 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET BTA06 BAT12 TO-251-4R TO-252-4R TO-220A TO-220B TO-220F MOSFETs N-P Channel

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    WEET TO-251-4R TO-252-4R TO-220A TO-220B TO-220F MOSFETs  Schottky Diodes Rectifiers N Channel Transistor
    BTA06/BTB06 6A 600V 800V BAT12 12A 600V 800V three terminal bidirectional thyristor
    TO-220 package is a kind of in-line package commonly used in high-power transistors and small and medium-sized integrated circuits.
    Among them, to is the abbreviation of transformer outline.

    Generally, TO-220 is a single row straight plug, which can lead out 3, 5 or 7 feet. Standard TO-220 footprint (seven pins).
    TO-220 and to-202F are basically the same shape, they are all 3-pin single in-line package with 2.54mm pin pitch.
    To-220F is a full plastic package, and there is no need to add insulation pad to the radiator.
    TO-220 with metal sheet connected to the middle foot, if the radiator is installed, an insulating pad shall be added.

    Performance comparison and difference between TO-220 and TO-220F
    TO-220, TO-220F: TO-220F is a full plastic package. When it is installed on the radiator, there is no need to add an insulating pad;
    TO-220 with metal sheet is connected to the middle foot, and an insulating pad is added when the radiator is installed.
    The MOS tubes of these two packaging styles have similar appearance and can be used interchangeably.
    The difference of PD between TO-220 and TO-220F is due to the difference of RJC between the two packages.
    TJ is generally considered to be 150 ℃. TJ = TC + PD * RJC, in which TC is the temperature of the structure shell closest to the wafer,
    PD is the power consumption carried on MOSFET, and RJC is the thermal resistance of judgment to case.

Publish: 2020/3/16 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET Pin Leads and 3 Single-Phase Bridge Rectifiers KBPC, GBPC, SKBPC, BR Packages

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballast, adapter, battery charger, home appliances, office equipment, and telecommunication applications. 3-phase Bridge Rectifier also found in many common power supplies.

    WEET Pin Leads and 3 Single-Phase Bridge Rectifiers as below:

    6.0A Bridge Rectifiers KBPC6005-KBPC610

     50.0A Bridge Rectifiers GBPC50005W-GBPC5010W

     8.0A Bridge Rectifiers KBPC8005-KBPC810

     15.0A Bridge Rectifiers SKBPC1504-SKBPC1516

     10.0A Bridge Rectifiers KBPC10005-KBPC1010 

     25.0A Bridge Rectifiers SKBPC25005-SKBPC2516

     10.0A Bridge Rectifiers KBPC10005-KBPC1010 

     35.0A Bridge Rectifiers SKBPC35005-SKBPC3516

     15.0A Bridge Rectifiers KBPC15005-KBPC1510

     50.0A Bridge Rectifiers SKBPC5006-SKBPC5016

     25.0A Bridge Rectifiers KBPC25005-KBPC2510

     25.0A Bridge Rectifiers S25VB005-S25VB100

     35.0A Bridge Rectifiers KBPC35005-KBPC3510

     35.0A Bridge Rectifiers S35VB005-S35VB100

     50.0A Bridge Rectifiers KBPC50005-KBPC5010

     50.0A Bridge Rectifiers S50VB005-S50VB100

     10.0A Bridge Rectifiers KBPC10005W-KBPC1010W

     10.0A Bridge Rectifiers KBPC1005-KBPC110

     25.0A Bridge Rectifiers KBPC25005W-KBPC2510W

     15.0A Bridge Rectifiers KBPC15005-KBPC1510

     35.0A Bridge Rectifiers KBPC35005W-KBPC3510W

     30.0A Bridge Rectifiers KBPC3005-KBPC310

     50.0A Bridge Rectifiers KBPC50005W-KBPC5010W

     15.0A Bridge Rectifiers BR15005-BR1510

     25.0A Bridge Rectifiers BR25005-BR2510

     35.0A Bridge Rectifiers BR35005-BR3510

     25.0A Bridge Rectifiers BR25005W-BR2510W

     50.0A Bridge Rectifiers BR50005-BR5010

     15.0A Bridge Rectifiers GBPC15005-GBPC1510

     15.0A Bridge Rectifiers BR15005W-BR1510W

     25.0A Bridge Rectifiers GBPC25005-GBPC2510

     35.0A Bridge Rectifiers BR35005W-BR3510W

     35.0A Bridge Rectifiers GBPC35005-GBPC3510

     50.0A Bridge Rectifiers BR50005W-BR5010W

     50.0A Bridge Rectifiers GBPC50005-GBPC5010

     15.0A Bridge Rectifiers BR15005L-BR1510L

     15.0A Bridge Rectifiers GBPC15005W-GBPC1510W

     25.0A Bridge Rectifiers BR25005L-BR2510L

     25.0A Bridge Rectifiers GBPC25005W-GBPC2510W

     35.0A Bridge Rectifiers BR35005L-BR3510L

     35.0A Bridge Rectifiers GBPC35005W-GBPC3510W

     50.0A Bridge Rectifiers BR50005L-BR5010L


Publish: 2020/3/9 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET KBP3005, KBP301, KBP302, KBP304, KBP306, KBP308, KBP310 GPP Bridge Rectifiers

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    WEE Technology WEET® KBP 3.0 AMPS KBP3005 THUR KBP310 (KBP3005, KBP301, KBP302, KBP304, KBP306, KBP308, KBP310) Glass Passivated Bridge Rectifiers

    https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/WEET_KBP3005_THUR_KBP310.html

    There are four kinds of rectifier bridge packages: square bridge, flat bridge, round bridge and mini bridge.

    Square bridge mainly includes (BR3, BR6, BR8, gbpc, kbpc, kbpc-w, gbpc-w, mt-35 (three-phase bridge)).

    Flat bridge is mainly packaged (kbp, KBL, kbu, kbj, GBU, GBJ, d3k).

    The round bridge is mainly packaged with (WOB, WOM, Rb-1).

    The mini bridge is mainly packaged (BDS, MBS, MBF, ABS).


Publish: 2020/3/2 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET Round Terminal KBP210 Can Be Replaced By Flat Terminal Package GBP210

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    Mostly, round terminal KBP210 can be replaced by flat terminal package GBP210, with same electronics characteristics and price level.

    Based on different PCB board design, we have to choose the best suitable products for your circuit and PCB board.

    https://www.weetcl.com/pdf/WEET_KBP2005_THUR_KBP210.pdf

    https://www.weetcl.com/pdf/WEET_GBP2005_THUR_GBP210.pdf

    Part   NumberPackageMax.ReverseMax.Aver.Peak Fwd.Max.Fwd.VoltageMaximum   ReverseTypical ThermalOperating
    VoltageRect.CurrentSurge   Current@25℃&Rated   loCurrent@Rated   VRM&TcResistanceTemp.Range
    VRM(V)lO(A)IFSM(A)Rated   lo(A)VF(V)IR@25℃(uA)IR@100℃(uA)(℃/W)Tj(℃)
    GBP210GBP100026011510047 -55~+150
    KBP210KBP100026011510047 -55~+150
    2AKBP2005-KBP206KBPBulk0.5K
    2AKBP208-KBP210KBPBulk0.5K
    3AKBP3005-KBP306KBPBulk0.5K
    3AKBP308-KBP310KBPBulk0.5K

Publish: 2020/2/24 Category: Bridge Rectifiers Read: Times Comment: 0Times
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