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WEET GBU608 GBU606 GBU604 GBU602 GBU601 GBU6005 Bridge Rectifier Applications Reference

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    GBU610 main application fields: switching power supply, power adapter, industrial switching power supply, photovoltaic solar power generation system, such as photovoltaic power station, solar street lamp and other products

    GBU610 also can be used in Small power switching power supply, power adapter, electric fan, TV, indoor air conditioner, household appliances and other related electrical products.

    Other voltages: GBU608,GBU606,GBU604,GBU602,GBU601,GBU6005


Publish: 2020/9/28 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET High Current 35A to 50A High Voltage 1000V Plug and Lead Terminal GPP Bridge Rectifiers

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    KBPC5010: 50A 1000V Zinc Case Plug terminal Bridge Rectifiers

    BR5010: 50A 1000V Zinc bottom plastic case Plug terminal Bridge Rectifiers

    GBPC3510: 35A 1000V Zinc bottom plastic case Plug terminal Bridge Rectifiers

    BR3510: 35A 1000V Zinc bottom plastic case Plug terminal Bridge Rectifiers

    GBU1010: 10A 1000V plastic case lead terminal flat GPP Bridge Rectifiers
    GBU610: 6A 1000V plastic case lead terminal flat GPP Bridge Rectifiers

    GBJ1010: 10A 1000V plastic case lead terminal flat GPP big size Bridge Rectifiers

    GBJ5010 50A 1000V plastic case lead terminal flat GPP big size Bridge Rectifiers


    WEET Power Supply Applications Reference:

    ► 18W Charger

    ► 24W Charger, Adapter

    ► PC Power

    ► Server Power

    WEET Home Appliance Applications Reference:

    ► TV Backlight Panel Flyback(Buck)

    ► TV Backlight Panel-PFC+LLC(Buck)

    ► Indoor Air conditioner

    ► Outdoor Air conditioner

    WEET LED Lighting Applications Reference:

    ► Lighting 3-10W Typical Function Block(Isolated)

    ► Typical Function Block Non-isolated (Buck)

    ► Typical Function Block Non-isolated (Buck-Boost ; Output Voltage Between 100VDC And 200VDC)

    ► LED Driver Solution


Publish: 2020/9/21 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET Top and Strong Flat Bridge Rectifiers 1000V GBU610 GBU1010 GBJ1010 GBJ5010 Cross to Taiwansemi

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    WEET GBU610 Cross Reference to Good-Ark Semiconductor:

    Forward Current - 6.0 Amperes

    WEET GBU1010 Cross Reference to Hy Electronic:

    Forward Current - 10.0 Amperes


    WEET GBJ1010 Cross Reference to YANGJIE TECHNOLOGY :

    Forward Current - 10.0 Amperes


    WEET GBJ5010  Cross Reference to Kingtronics

    Forward Current - 50.0 Amperes


    Maximum Repetitive Peak Reverse Voltage VRRM 1000V

    Maximum RMS Voltage VRMS 700V

    Maximum DC Blocking Voltage VDC 1000V


    You can find more products on our website at : www.weetcl.com, www.wdiode.com



Publish: 2020/9/14 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET GBU610 GBU1010 GBJ1010 GBJ5010 GBPC3510 KBPC5010 BR3510 BR5010 Samples Are Ready

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    Good news to all of our valuable cusotmer, after a time of efforts, WEET has totally resume wrok from epidemic situation. 

    Although, the price rise of raw material copper has influence on the manufacturing cost. WEET is still trying to support customer at my best.

    This week, we prepared below glass passivated chip bridge rectifiers samples, free for testing.


    GBU610 GBU1010 GBJ1010 GBJ5010 GBPC3510 KBPC5010 BR3510 BR5010 Samples Are Ready


    WEET is capable of producing below different pakcage bridge rectifiers:

    Round bridge WOB, 2WOB series;

    Flat bridge KBP, KBL, KBU, KBJ, GBU, GBJ, RBV, PBU, PBL series;

    Square bridge KBPC, BR, SB, MP, BP series; MB, MBS, HD, DB, DF bench bridge, patch bridge; GBPC silicon bridge, etc,


Publish: 2020/9/7 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET Shares the Working Principle of Single Phase Bridge Rectifier Circuit and 1000V Devices

    WEE Technology Company Limited 
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    Single phase bridge rectifier circuit is a bridge rectifier device, also known as rectifier bridge stack. It is the most commonly used circuit for rectifying by using the unidirectional conductivity of diodes. It is commonly used to convert alternating current into direct current.


    Half wave rectifier uses the unidirectional conduction characteristics of diode. When the input is standard sine wave, the positive half of the output sine wave is obtained, and the negative half part is lost.

    The bridge rectifier uses four diodes, which are connected in pairs. The positive half of the input sine wave is two tubes conducting, and the positive output is obtained; when the negative half part of the input sine wave is input, the other two tubes are on. Because these two tubes are connected in reverse, the output is still the positive half of the sine wave.


    The utilization efficiency of bridge rectifier to input sine wave is twice as high as that of half wave rectifier. Bridge rectifier is the first step of converting alternating current into direct current.

    The bridge rectifier is composed of several rectifier diodes connected by bridge and packaged with insulating plastic. The high-power bridge rectifier adds metal shell to the insulation layer to enhance heat dissipation.

    The bridge rectifier has many varieties, excellent performance, high rectification efficiency and good stability. The maximum rectifier current is from 0.5A to 50a, and the maximum reverse peak voltage is from 50V to 1000V.


    WEET  Hot 1000V Bridge Rectifiers: GBU410, GBU610, GBU810, GBU1010, GBJ1010, GBJ2510, GBJ5010, GBPC3510, GBPC5010, KBPC3510, KBPC5010, BR3510, BR5010

    Applied to small current field products: low power switching power supply, power adapter, LED lamp rectifier, electric fan, TV, indoor air conditioner, household appliances and other related electrical products.


Publish: 2020/9/4 Category: Bridge Rectifiers Read: Times Comment: 0Times

WEET Through Hole DIP Diodes Rectifiers Packing and Package Introduction Chart and Cross Table

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    A-405: MUR140 THRU MUR160 (MUR140, MUR160) Ultra-Fast Recovery Rectifiers

    R-1: 1F1 THRU 1F7 (1F1, 1F2, 1F3, 1F4, 1F5, 1F6, 1F7)Fast Recovery Rectifier

    R-6: HER601 THRU HER608 (HER601, HER602, HER603, HER604, HER605, HER606, HER607, HER608) High Efficient Rectifier

    DO-41: 1N4933 THRU 1N4937 (1N4933, 1N4934, 1N4935, 1N4936, 1N4937)Fast Recovery Rectifier

    DO-15: SF21G THRU SF28G (SF21G, SF22G, SF23G, SF24G, SF25G, SF26G, SF28G) Ultra-Fast Recovery Rectifiers

    DO-27: ER301 THRU ER308 (ER301, ER302, ER303, ER304, ER306, ER308) Ultra-Fast Recovery Rectifiers

    DO-34, DO-35: 1N4148 Silicon Epitaxial Planar Switching Diode

    DO-41: BZX85C2V7 THRU BZX85C75 (BZX85C2V4, BZX85C2V7, BZX85C15,BZX85C27…BZX85C75) Silicon Epitaxial Planar Zener Diodes

Publish: 2020/8/24 Category: Fast Recovery Rectifiers Read: Times Comment: 0Times

WEET Surface Mounted SMD Diodes and Rectifiers Packing and Package Diagram and Sample Chart

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    SMA <--->2010

    SMB <--->2114

    SMC <--->3220

    SOD123  <--->1206

    SOD323 <--->0805

    SOD523 <--->0603 


    DO-214AA<--->SMA

    DO-214AB<--->SMB

    DO-214AC<--->SMC

    DO-213AB<--->MELF 


    SMAF M1 THRU M7 (M1, M2, M3, M4, M5, M6, M7) General Purpose Plastic Rectifier

    SMA(DO-214AC) S2A THRU S2M ( S2A, S2B, S2D, S2G, S2J, S2K, S2M) General Purpose Plastic Rectifier

    SMB(DO-214AA) S3A THRU S3M (S3A, S3B, S3D, S3G, S3J, S3K, S3M) General Purpose Plastic Rectifier

    SMC(DO-214AB) S5A THRU S5M (S5A, S5B, S5D, S5G, S5J, S5K, S5M) General Purpose Plastic Rectifier


    https://www.weetcl.com/General_Purpose_Rectifiers/



Publish: 2020/8/18 Category: General Rectifier Diodes Read: Times Comment: 0Times

WEET Wafer Chip Workshop For Transient Voltage Suppressors and Most Diodes Rectifiers GPP Chips

    WEE Technology Company Limited 
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    WEET as the leading diodes and rectifiers factory in China, we bulit our own chip production line. 

    On one hand, WEET can control the most important quality part of the diodes, on the other hand, we can do the most practical budgets and do cost down plan for our valuable customers.

    We are proud that the chip workshop have been running stably and successfully for more than 8 years, which is rare in China and among other competitors.

Publish: 2020/8/12 Category: About WEE Technology Read: Times Comment: 0Times

WEET One of Top Zener Diode Factory in China Foucs on 500mW Zener Diode 2.4V to 75V

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    How to understand the code of Zener Diode, usually you can easily follow the part number or read the marking on the Zener Diode body, such as below:

    5.1=5.1 Volt zener diode

    5V1=5.1 Volt zener diode

    12= 12 Volt zener diode

    12V= 12 Volt zener diode

    BZX85C22=22 Volt 1 watt zener diode

    BZV55C4V7=4.7 Volt 500m watt zener diode


    But sometimes you have to read the datasheet and find our the exact meaning of the Zener Diode voltage and power dissipation, for instance 1N4727A-1N4761A series 

    1N4739A = 9.1 Volt zener diode

    1N4754A = 39 Volt zener diode


    When you have any problem in choosing a right Zener Diodes, you have to check with the manufacturer's code book. Below is the strong  WEET Zener Diodes list. We are ready to serve you .

    Silicon Planar Zener Diodes BZX84C

    Silicon Planar Power Zener Diodes BZX85C

    Silicon Planar Power Zener Diodes 1N4727A-1N4761A

    Silicon Epitaxial Planar Zener Diodes ZMM1-ZMM75

    Silicon Planar Power Zener Diodes ZM4727-ZM4761

    Zener Diodes 500m watt BZV55-SERIES

    Zener Diodes 500m watt BZV55B-SERIES

    Zener Diodes 500m watt BZX55C


Publish: 2020/8/3 Category: Zener Diodes Read: Times Comment: 0Times

WEET 2020-2025 Semiconductor & Electronic Component Manufacturing Market Analysis

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    Geographical segmentation of Electronic Components market:

    Americas (United States, Canada, Mexico, Brazil), 

    APAC (China, Japan, Korea, Southeast Asia, India, Australia),

    Europe (Germany, France, UK, Italy, Russia, Spain),

    Middle East & Africa (Egypt, South Africa, Israel, Turkey, GCC Countries)


    Global Electronic Components market by Type: Active components, Passive components, Electromechanical


    Global Electronic Components market by application: Automotive, Communications, Computing Applications, Industrial, Instrumentation, Lighting, Medical, Motor Control, Security


    Global Electronic Components market by major vendor/manufacturers in the market:

    Analog Devices, Inc., Omron, Texas Instruments, ABB, NXP Semiconductors, Murata, Kyocera, STMicroelectronics,  Samsung Electro-Mechanics, Infineon Technologies, Qorvo, Vishay, Molex, TDK Corporation, Nippon Mektron, Microchip, Taiyo Yuden Co., Ltd., WEE Technology, Skyworks, ON Semiconductor, TE Connectivity Ltd., Vectron, Panasonic Corporation, Eaton Corp., Littelfuse, KEMET, Microchip Technology, Yageo, Nippon Chemi-Con, Maxim Integrated, Amphenol

Publish: 2020/7/27 Category: About WEE Technology Read: Times Comment: 0Times

WEET Released the Key Trends in Mobile Communication in 5G Applications and Diodes Usage in GNSS and

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    Mobile phones represent the largest worldwide market in terms of both volume and number of applications on a single platform. 

    Currently about 1.5 billion smartphones are shipped per year worldwide. 

    The major wireless functions in a typical mobile phone include a 2G/3G/4G (GSM/EDGE/CDMA/UMTS/WCDMA/LTE/LTEA/TD-SCDMA/TD-LTE) cellular modem, 

    and wireless connectivity systems such as Wireless Local Area Network (WLAN), Bluetooth, Global Navigation Satellite System (GNSS), broadcasting receivers, and Near-Field Communication (NFC).


    Motivated by increasing demand for mobile broadband services with higher data rates and better quality of service, the mobile phone industry has seen tremendous growth in recent years from 3G/3.5G High-Speed Packet Access (HSPA), Evolved High-Speed Packet Access (HSPA+) to 3.9G Long-Term Evolution (LTE), recently 4G Long-Term Evolution Advanced (LTE-A) and 5G.

Publish: 2020/7/20 Category: About WEE Technology Read: Times Comment: 0Times

WEET Bridge Rectifiers KUB KPB DBS MBS KBPC GBPC Bulk Box and Tube Packing

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    WEE Technology is the earliest bridge rectifiers factory in China, which also specialized in diodes and related semiconductors. 

    Tube packing for lower current and small size bridge rectifiers.

    1.0 AMPS. MB1F THRU MB10F (MB1F, MB2F, MB3F, MB4F, MB6F, MB8F, MB10F) Glass Passivated Bridge Rectifiers

    2.0 AMPS. DB201 THRU DB207(DB201, DB202, DB203, DB204, DB205, DB206, DB207) Glass Passivated Bridge Rectifiers

    1.0 AMPS. MB1S THRU MB10S (MB1S, MB2S, MB3S, MB4S, MB6S, MB8S, MB10S) Glass Passivated Bridge Rectifiers


    Box Bulk packing  for higher current and big size bridge rectifiers.

    50.0 AMPS GBPC50005 THRU GBPC5010 (GBPC50005, GBPC5001, GBPC5002, GBPC5004, GBPC5006, GBPC5008, GBPC5010) Bridge Rectifiers

    35.0 AMPS GBPC35005W THUR GBPC3510W (GBPC35005W, GBPC3501W, GBPC3502W, GBPC3504W, GBPC3506W, GBPC3508W, GBPC3510W) Bridge Rectifiers

    15.0 AMPS GBPC15005 THRU GBPC1510 ( GBPC15005, GBPC1501, GBPC1502, GBPC1504, GBPC1506, GBPC1508, GBPC1510 ) Bridge Rectifiers

    35.0 AMPS KBPC35005 THUR KBPC3510(KBPC35005W, KBPC3501W, KBPC3502W, KBPC3504W, KBPC3506W, KBPC3508W, KBPC3510W) Bridge Rectifiers

    10.0 AMPS KBPC10005 THUR KBPC1010K ( KBPC10005, KBPC1001, KBPC1002, KBPC1004, KBPC1006, KBPC1008, KBPC1010 ) Bridge Rectifiers


    https://www.weetcl.com/Single_Phase_Bridge_Rectifiers/


Publish: 2020/7/14 Category: About WEE Technology Read: Times Comment: 0Times

WEET Glass and Plastic Axial and SMD Diodes and Rectifiers Bulk, Ammo and Tape and Reel Packing

Publish: 2020/7/6 Category: About WEE Technology Read: Times Comment: 0Times

WEET SIC Schottky Diode SCS208AGC in 5G Micro Station 1KW Power PFC Circuit

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    SIC Schottky diode SCS208AGC is used in 1KW 5G communication power supply PFC circuit to effectively improve the system efficiency

    With the rapid increase of power consumption and quantity of 5g base station, the power supply problem is also the biggest problem. In 5G wireless side micro station power supply scheme, the direct power supply scheme is commonly used. The power is in the range of 1kW ~ 3KW. The circuit diagram frame of 5g micro station power supply scheme mainly includes single-phase rectification, PFC, LLC transformation and synchronous rectification.


    The application of SIC Schottky diode SCS208AGC in 5G MicroStation 1KW power PFC circuit has the following advantages:

    1. The reverse voltage VR is 650V, which can meet the application voltage requirement of rectifying output voltage between 300V and 400V, and reserve two times of margin, which can better deal with high reverse voltage;

    2. The continuous forward current if is 8a, which can meet the power demand of 1kW; the total capacitance charge QC is 13nc. Small reverse recovery charge can switch at high speed, reduce switching loss and effectively improve the overall system efficiency of the power supply;

    3. Because scs208agc can switch at high speed, the switching frequency of PFC switch tube Q2 / Q4 can be increased, so as to reduce the size and cost of magnetic materials L1 and L2, and reduce the cost for the overall power supply design;

    4、 The temperature range of working junction and storage is -55~175 ℃, wide temperature range. It can be well adapted to the closed natural cooling conditions when the power box is installed as an outdoor holding pole or wall mounted installation environment.

    5. The TO-220AC package has small package volume and is easy to be arranged in the compact power board position.

Publish: 2020/6/29 Category: Schottey Barrier Rectifiers Read: Times Comment: 0Times

WEET New Gallium Nitride Devices Developed in the US! 5G Technology Peak Rate Exceeds Expectations

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.


    According to reports, US researchers have developed a new type of GaN based electronic device called resonant tunneling diode, which has been applied to 5G technology with a peak speed higher than expected.

    "The frequency and output power of GaN based resonant tunneling diodes are higher than that of traditional materials, and the key to their speed is the use of Gan materials," the researchers said.

    The GaN based "resonant tunneling diode" breaks the record of current output and switching rate of traditional devices, and enables applications (including communication, networking and remote sensing) to obtain electromagnetic waves and terahertz frequencies in the millimeter wave range.

    As the third generation semiconductor material, gallium nitride (GAN) is a kind of hard material with high melting point (melting point is about 1700 ℃), which has the characteristics of high frequency, high efficiency, high pressure resistance and so on. It is used to make a variety of power devices and chips.

    Gallium nitride has been studied in the field of semiconductor materials for many years. Recently, it is widely known because it can be used in chargers. The charging market is not the only place where Gan power devices can be used, but also in the fields of Optoelectronics and RF.

    It is worth mentioning that, in the RF field, gallium nitride RF devices are suitable for high-frequency and high-power scenarios, and are excellent products in the 5G era. They will replace Si based chips and be used in 5G base stations, satellite communications, military radars and other scenarios.

    In the Political Bureau meeting, the construction of 5G base station ushered in the peak, the corresponding number and quality of various RF devices and chips are improving, and the market demand is strong. Gallium nitride technology is gradually occupying the market, which is unstoppable.

    According to the prediction of topu Industry Research Institute, by 2023, the base station Gan RF device scale will reach the peak, reaching 11.26 billion yuan. Combined with the market of satellite communication and military radar, it is predicted that the Gan RF market will grow from 645 million dollars in 2018 to about 2 billion dollars in 2024.

    In addition, GaN based UV laser has important application value in UV curing, UV sterilization and other fields. At present, both China and the United States have used GaN based UV disinfection and sterilization, and the relevant market has grown.

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Publish: 2020/6/17 Category: About WEE Technology Read: Times Comment: 0Times

WEET 5G Applications in Transient Voltage Suppressors SMCJ24CA and Schottky Rectifiers and TVS Didoe

    WEE Technology Company Limited

    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    Rectifiers / Transient Voltage Suppressors

    Transient Voltage Suppressors

    Schottky Rectifiers

    • Rectifiers for high di/dt snubbers in compact packages

    • 200 W to 600 W TVS for snubbers; low clamping ratios

    P2SMA220A, P4SMA180A, P4SMA220A, P6SMB180A, P6SMB200A

    • 1500 W to 5000 W TVS with high power density for lightning protection 

    SMCJ75CA

    • 1500 W / 3000 W TVS with high power density for DC/DC protection

    SMCJ24CA, SMCJ33CA, SMCJ36A

    • Schottky rectifiers in compact packages for auxiliary service and synchronous parallel rectification

    • Packages: SMF(DO-219AB),MicroSMP(DO-219AD),SlimSMA(DO-221AC),SlimSMAW(DO-221AD),SMPA(DO-221BC),SMC(DO-214AB),SMA(DO-214AC),SMB(DO-214AA)

Publish: 2020/6/9 Category: About WEE Technology Read: Times Comment: 0Times

WEET WEE Technology 5G APPLICATIONS of Diodes and Rectifiers in Base Stations System Architecture

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    System Architecture (diagram)

    High Current Density Bridge Rectifiers

    Didoes and Rectifiers

    Schottky Rectifiers

    Low Voltage Rectifiers

    Small Signal Switching Diodes

    Small Signal Schottky Diodes

    Small Signal Zener Diodes


    High current density bridge rectifiers in compact packages

    • Low VF and high forward surge current capability

    • Improves system power efficiency

    Rectifiers in compact packages for auxiliary functions (snubber, clamp, bootstrap, rectifier, etc.)

    • Increased power density for space savings

    • Improved recovery for better EMC

    Schottky rectifiers in compact packages for sub-power in line cards

    • Increased power density for space savings

    Low voltage rectifiers for bridgeless and multiphase bridgeless topologies

    • Increased power density for space savings, improved efficiency

Publish: 2020/6/2 Category: About WEE Technology Read: Times Comment: 0Times

WEET Shares Technology Frontier—GaN Semiconductor—Key Material for 5G Application

    WEE Technology Company Limited
    Manufacturer of Surface Mounted (SMD) and Throught Hole (DIP) Diodes and Rectifiers.

    2019 is a year of rapid changes, the economy is under downward pressure, and trade war conflicts have intensified, and many industries have entered a recession cycle. However, semiconductor industry 2019 is a year of rapid changes. The recession cycle has entered, but the semiconductor industry continues to move forward on the opportunity of domestic substitution and industrial renewal. For compound semiconductors, whether it is gallium nitride for radio frequency or silicon carbide for power electronics, there has been considerable development.

    The 5G communication business is entering a period of rapid expansion, and the corresponding GaN chips and power chips continue to grow. Gallium nitride technology has basically determined its technical route and application in the field of radio frequency, that is, growing gallium nitride epitaxy on silicon carbide high-purity insulating substrates, and making chips on it for communication applications such as high-frequency power amplifiers.

    With the development of 5G communications and the Internet of Things, the demand in this field will be increasing. It is worth noting that the application of GaN technology in power supplies. The cost and performance of gallium nitride power devices grown on silicon substrates have been much better than similar silicon devices. Although its long-term reliability still needs to be verified, for consumer-grade applications such as mobile phone fast charging, GaN is expected to be fully introduced and applied.

    Silicon carbide is a very promising material, especially in power devices and power applications. It is currently receiving great attention. With the delivery of the first batch of domestic Tesla electric vehicles by the end of 2019, silicon carbide power devices related fields have been fully replaced. The trend of silicon-based IGBTs is becoming more and more obvious. Especially the high efficiency, low weight, small volume, and ease of use in heat dissipation and parallel connection brought by silicon carbide are crucial to the overall design of new energy vehicles.

    The rapid development of industries such as automotive electronics, 5G technology, new energy vehicles, and rail transportation has increased the demand for high-temperature, high-power, high-voltage, and high-frequency devices in electronic technology, so the third generation of semiconductors came into being. The third generation semiconductors mainly include silicon carbide (SiC), aluminum nitride (AlN), gallium nitride (GaN), diamond, and zinc oxide (ZnO). Among them, the more mature ones are SiC and GaN.



Publish: 2020/5/27 Category: About WEE Technology Read: Times Comment: 0Times

WEET Social Media in 2020 Blogs, Website, Twitter, WordPress, LinkedIn, YouTube, Capacitors Web

Publish: 2020/5/20 Category: About WEE Technology Read: Times Comment: 0Times

WEET MBR30300CT MBR30300FCT 30A High Barrier Power Schottky Rectifiers 300V Features and Cross Refer

    WEE Technology Company Limited
    Manufacturer of Surface Mount (SMD) and Through Hole (DIP) Diodes & Rectifiers

    WEET MBR30300CT MBR30300FCT 30A High Barrier Power Schottky Rectifiers 300V Features and Cross Reference

    MBR3020FCT · MBR3020PT · MBR3020PT · MBR3020PT · MBR3020W · MBR3020WT · MBR30250CT · MBR3030 · MBR3030 · MBR30300CT · MBR30300FCT

    • 150°C operating junction temperature.

    • Offer 15A half wave and 30A full wave rectification.

    • Low power loss, high efficiency.

    • High current capability

    • High surge capability.

    • Guardring for overvoltage protection.

    • Low stored charge majority carrier conduction

    • Lead-free parts meet RoHS requirments.

    • Suffix "-H" indicates Halogen-free part, ex.MBR30300CT-H

Publish: 2020/4/28 Category: Schottey Barrier Rectifiers Read: Times Comment: 0Times
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